MRF7S35015HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
15.25
17.25
3100
-- 3 6
44
43
41
f, FREQUENCY (MHz)
Figure 13. Pulsed Power Gain, Drain Efficiency
and IRL versus Frequency
G
ps
, POWER GAIN (dB)
η
D,
DRAIN
EFFICIENCY (%)
17
42
16.25
16
VDD
=32Vdc,IDQ
=50mA,Pout
=15W
Pulse Width = 100
μsec, Duty Cycle = 20%
15.75
15.5
-- 2 7
Gps
ηD
16.75
16.5
3150 3200
3250
3300
3350
3400
3450
3500
-- 1 8
-- 9
IRL, INPUT
RETURN LOSS (dB)
IRL
18
GAIN (dB)
28
Pout, OUTPUT POWER (dBm)
Figure 14. Single--Channel OFDM Relative Constellation Error,
Drain Efficiency and Gain versus Output Power
17.9
18.3
18.2
18.1
-- 4 5
-- 2 5
-- 2 7
-- 2 9
4
24
22
20
18
14
12
10
8
η
D
, DRAIN EFFICIENCY (%)
ηD
RCE (RELATIVE CONSTELLATION ERROR (dB)
-- 3 1
-- 3 3
-- 3 7
-- 3 9
-- 4 1
-- 4 3
29 30 31 32 33 3634 35
16
6
17.8
RCE
-- 3 5
Gps
VDD=32Vdc,IDQ
= 150 mA, f = 3500 MHz, Single--Carrier
3/4,4Bursts,10MHz
OFDM 802.16d, 64 QAM
Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability on
CCDF
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 15. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD
=32Vdc,Pout
= 15 W Peak, Pulse Width = 100
μsec,
Duty Cycle = 20%, and
ηD
= 41%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
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